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采用模板法制备了尺度均一的Si O_2中空微球(HSS),将其均匀分散于高温硫化硅橡胶(HTV)中制成HSS/HTV复合材料,分析了HSS的形貌及壁厚,考察了其对硅橡胶电气绝缘性能的影响及其与硅橡胶基体的相互作用.结果表明,HSS对硅橡胶的体积电阻率、击穿强度、介电常数及介电损耗均有较明显的影响,优于同等含量的气相Si O_2/HTV复合材料.加入HSS后,复合材料的体积电阻率由纯硅橡胶的5.3×1015Ω·cm提升至1017Ω·cm数量级,但随HSS含量增大略有下降;击穿强度随HSS含量增加而增大,含量为0.05 g/g时达21.6 k V/mm,比纯硅橡胶提高了26.3%;介电常数随HSS含量增大先降低后升高,含量为0.02 g/g时最低;介电损耗随HSS含量增大略有增大,但仍较低.
Homogeneous Si O 2 hollow microspheres (HSS) were prepared by the template method, and were uniformly dispersed in high temperature vulcanized silicone rubber (HTV) to form HSS / HTV composites. The morphology and wall thickness of the HSS were investigated. Its effect on the electrical insulation properties of silicone rubber and its interaction with the silicone rubber matrix.The results show that the HSS has a significant impact on the volume resistivity, breakdown strength, dielectric constant and dielectric loss of silicone rubber, excellent The volume resistivity of the composites increased from 5.3 × 10 15 Ω · cm to 1017 Ω · cm, but slightly decreased with the increase of HSS content. The strength increased with the increase of HSS content, which reached 21.6 k V / mm at 0.05 g / g, which was 26.3% higher than that of pure silicone rubber. The dielectric constant decreased first and then increased with the increase of HSS content, which was 0.02 g / g when the lowest; dielectric loss with the increase of HSS slightly increased, but still low.