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靶材刻蚀特性是研究磁控溅射靶材利用率、薄膜生长速度和薄膜质量的关键因素。本文用有限元分析软件ANSYS模拟了磁控溅射放电空间的磁场分布,用粒子模拟软件OOPIC Pro(object oriented particlein cell)模拟了放电过程,最后用SRIM(stopping and range of ions in matter)模拟了靶材的溅射特性,得到了靶材的刻蚀形貌和刻蚀速度,并讨论了不同工作气压和不同阴极电压对靶材刻蚀的影响。模拟结果表明:靶材刻蚀形貌与磁场分布有关,磁通密度越强,对应的靶材位置刻蚀越深;靶材的刻蚀速度随阴极电压的增大而增大,而当工作气压增大时,靶材的刻蚀速度先增大后趋向平衡,当工作气压超过一定的值时,刻蚀速度随气压的增大开始减小。模拟结果与实验观测进行了比较,二者符合较好。
The target etching characteristics are the key factors to study the utilization of magnetron sputtering target, the growth rate of the film and the quality of the film. In this paper, the finite element analysis software ANSYS was used to simulate the magnetic field distribution in magnetron sputtering discharge space. The particle discharge simulation was carried out using the particle oriented simulation software OOPIC Pro (object oriented particlein cell). Finally, the stopping and range of ions in matter The sputtering characteristics of the target material, the etching morphology and etching speed of the target material were obtained, and the effects of different working pressure and different cathode voltage on the target etching were discussed. The simulation results show that the etching morphology of the target is related to the distribution of the magnetic field. The stronger the magnetic flux density, the deeper the corresponding target is etched. The etching speed of the target increases with the increase of the cathode voltage. When the pressure increases, the etching rate of the target first increases and then tends to balance. When the working pressure exceeds a certain value, the etching speed begins to decrease as the pressure increases. The simulation results are compared with the experimental observations, the two are in good agreement.