利用喇曼散射方法在77K温度下对不同淀积厚度的InAs/GaAs量子点材料进行了研究.在高于InAs体材料LO模的频率范围内观察到了量子点的喇曼特征峰,分析表明应变效应是影响QD声子频率的主要因素.实验显示,随着量子点层淀积厚度L的增加,InAs量子点的声子频率由于应变释放发生红移.在加入InAlAs应变缓冲层的样品中,类AlAs声子峰随L增大发生了蓝移,从侧面证实了InAs量子点层的应变释放过程. Raman scattering was used to study the InAs / GaAs QDs with different deposition thickness at 77 K. The Raman peak of quantum dots was observed in the frequency range above the LO mode of InAs bulk materials. The analysis showed that strain Effect is the main factor affecting the phonon frequency of QD.The experimental results show that the phonon frequency of InAs quantum dots is red shifted due to the strain release with the increase of the deposition thickness of quantum dot layer L. In the sample with InAlAs strain buffer layer, The blue-shift of the AlAs phonon peaks with the increase of L shows the strain release process of InAs quantum dots layer from the side.