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Zinc oxide (ZnO) thin films with hundreds nanometers in thickness (preferred c-axis orientation) were prepared by radio frequency magnetron sputtering. These films were irradiated with 3.64 or 308 MeV Xe-ions at room temperature (RT). The 3.64 MeV Xe-ions
The films were irradiated with 3.64 or 308 MeV Xe-ions at room temperature (RT). The 3.64 MeV Xe -ions