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用阳极腐蚀的方法制备了多孔硅样品，用电化学方法在多孔硅中注入Er3+、In3+等金属离子，并对注入离子后多孔硅的光致荧光光谱进行了研究，结果表明：注入Er3+及In3+后的多孔硅在588nm处的发光峰强度大大增加，同时发光峰稍有展宽。随着离子注入时间的增长，强度继续增加，但当离子溶液浓度一定时，这种增强对时间具有饱和性．
Porous silicon samples were prepared by anodic etching. Electrochemical methods were used to inject metal ions such as Er3 + and In3 + ions in porous silicon. The fluorescence spectra of porous silicon after ion implantation were studied. The results showed that the Er3 + and In3 + After the porous silicon at 588nm at the emission peak intensity greatly increased, while the light emission peak slightly widened. As the ion implantation time increases, the intensity continues to increase, but when the ion concentration is constant, the enhancement is saturated with time.