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介绍了一种新型长波长InP基谐振腔增强型(RCE)光探测器。通过V(FeCl3):V(H2O)溶液对InGaAs牺牲层的选择性湿法腐蚀,制备出具有InP/空气隙的高反射率分布布拉格反射镜(DBR),并将该选择性湿法腐蚀技术成功地应用到长波长InP基谐振腔增强型光探测器的制备中去,从而彻底解决了InP/InGaAsP高反射率分布布拉格反射镜难以外延生长的问题。所制备出的谐振腔增强型光探测器,其台面面积为50μm×50μm,底部反射镜为1.5对的InP/空气隙分布布拉格反射镜,顶部反射镜靠InGaAsP与空气的界面反射来实现。测试结果表明,该谐振腔增强型光探测器在波长1.510μm处获得了约59％的峰值量子效率,在3V反偏压下暗电流为2nA,3dB响应带宽达到8GHz。
A new type of long wavelength InP based resonator enhanced (RCE) photodetector is introduced. By selective wet etching of the InGaAs sacrificial layer by V (FeCl3): V (H2O) solution, a high reflectance distributed Bragg reflector (DBR) with InP / air gap was prepared and the selective wet etching technique Successfully applied to the long-wavelength InP-based resonant cavity enhanced photodetector preparation to completely solve the InP / InGaAsP high reflectivity distributed Bragg reflector is difficult to epitaxial growth problems. The prepared cavity enhanced photodetector with an area of 50μm × 50μm, the bottom mirror is 1.5 pairs of InP / air gap distributed Bragg reflection mirror, the top of the mirror by InGaAsP and air interface reflection to achieve. The experimental results show that the resonant cavity enhanced photodetector achieves about 59% peak quantum efficiency at 1.510μm wavelength, 2nA dark current at 3V reverse bias and 8GHz response bandwidth at 3dB.