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Cross-sectional investigation is an important method to study ion irradiation effects in the depth direction.In this study,2 MeV H+ was implanted in 6H-SiC single crystals to investigate the effects of light ion irradiation on SiC.Raman spectroscopy and scanning electronic microscopy (SEM) were carried out on cross-sectional samples to reveal the in-depth damage states and dopant behavior.The most damaged region is a little shallower than that predicted by the SRIM procedure,owing to the uncertainty in SRIM simulations.Layered structures representing zones of varying damage after 2 MeV H ion irradiation are clearly observed.Two bands are observed in SEM images,of which on band corresponds to the damage peak,while the other band at the end of the H ion-affected area is probably a result of H diffusion propelled by a hydrogen-rich layer during irradiation.A charge accumulation effect related with conductivity on the sample surfaces during SEM tests is observed in the H-implanted area.A model is proposed to explain these phenomena.