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5. ,High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensio

,High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensio

来源 :中国物理B（英文版） | 被引量 : 0次 | 上传用户：liongliong431

【作 者】

：

Zheng Liu Zhang Feng Liu Sheng-Bei Dong Lin Liu Xing-Fang Fan Zhong-Chao Liu Bin 

【机 构】

：

Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of S

【出 处】

：

中国物理B（英文版）

【发表日期】

：

2004年期

【关键词】

：

4H-SiC junction barrier Schottky (JBS) diode high-temperature annealed resistive 

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