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研究了W掺In2O3(IWO)缓冲层(buffer layer)对磁控溅射直接生长绒面结构H化Ga掺杂ZnO(HGZO)薄膜的微观结构和光电性能的影响。实验发现,加入IWO缓冲层能够有效地增大薄膜表面粗糙度,提高了薄膜光散射能力,薄膜绒度(550nm波长处)由7.05%提高至18.37%;具有IWO缓冲层的HGZO(IWO/HGZO)薄膜的电学性能稍微提升。通过优化工艺条件,当IWO缓冲层厚为10nm时,生长获得的IWO/HGZO复合薄膜方块电阻为3.6Ω,电阻率为6.21×10-4Ωcm,可见光及近红外区域透过率(400～1 100nm)为82.18%,薄膜绒度(550nm波长处)为18.37%。
The effect of W-doped In2O3 (IWO) buffer layer on the microstructure and optical properties of H-doped Ga-doped ZnO (HGZO) films grown by magnetron sputtering was studied. It was found that adding IWO buffer layer can effectively increase the surface roughness of the film and improve the light scattering ability of the film. The film sliver (550nm wavelength) was increased from 7.05% to 18.37%. The IWO buffer layer with IWO / HGZO The electrical properties of the film slightly improved. By optimizing the process conditions, the IWO / HGZO composite thin films with a thickness of 10nm have a resistance of 3.6Ω and a resistivity of 6.21 × 10-4Ωcm. The transmittance of visible light and near infrared region (400 ~ 100nm ) Was 82.18%, and film fleece (at 550 nm wavelength) was 18.37%.