论文部分内容阅读
利用多孔硅形成的选择性 ,在指定的硅衬底区域制作多孔硅作牺牲层。提出了先制作微结构 ,后进行阳极氧化 ,形成多孔硅牺牲层的工艺 ,由此制备出了良好的悬空结构 ,并对多孔硅形成的选择性、掩模材料和工艺条件进行了研究。
Utilizing the selectivity of porous silicon formation, porous silicon is sacrificed in the designated silicon substrate area. A process of making a microstructure and then anodizing it to form a sacrificial layer of porous silicon is proposed. A good floating structure is prepared, and the selectivity of the porous silicon, the material of the mask and the process conditions are studied.