通过反应溅射的方法,制备了N掺杂的Ge2Sb2Te5(NGST)薄膜,用作相变存储器的存储介质.研究表明,掺杂的N以GeN的形式存在,不仅束缚了Ge2Sb2Te5(GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用NGST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异,能够在同一存储单元中存储三个状态,实现相变存储器的多态存储功能. The N-doped Ge2Sb2Te5 (NGST) thin films were prepared by reactive sputtering and used as storage media for phase change memory.The results show that the doped N is in the form of GeN, which not only binds the GeSb2Te5 (GST) Also increases the crystallization temperature and the phase transition temperature of GST.Using the difference in resistivity of the amorphous, crystalline face-centered cubic and crystalline hexagonal phases of the NGST thin film, three states can be stored in the same memory cell , To achieve phase change memory multi-state memory function.