本文较系统地评述了 MOCVD 或 MBE 实现以 Si 为衬底 GaAs 异质外延工艺,及其在半导体激光器中应用的研究进展。叙述了以 Si 为衬底异质外延的工艺关键,使用 GaAs/Si 材料制备激光器的发展水平,降低外延层中位错密度和应力可能的方法。最后,介绍了该技术及其用于制备高性能激光器的发展动向。 This article systematically reviews the MOCVD or MBE to achieve Si-based GaAs heteroepitaxy process, and its application in semiconductor lasers research progress. Described the process of using Si as the substrate heteroepitaxial epitaxial growth process, the use of GaAs / Si material to prepare the level of development of the laser to reduce the possibility of dislocation density and stress in the epitaxial layer. Finally, the technology and its development trend for preparing high performance laser are introduced.