论文部分内容阅读
本文研究了 LPE GaAs 生长条件对外延层补偿度的影响。根据实验结果,指出衬底表面受热缺砷是形成 Si_(As)受主的原因。
This paper studies the influence of LPE GaAs growth conditions on the epitaxial layer compensation. According to the experimental results, it is pointed out that the lack of arsenic on the substrate surface is responsible for the formation of Si_ (As) acceptors.