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利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition,HPCVD)可以制备出高性能的MgB2超导薄膜,再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素,与未处理的干净MgB2样品相比,其超导转变温度没有出现大幅度的下降,而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高.在温度5 K,外加垂直磁场为4 T的情况下,Ti离子辐照剂量为1×10~(13)/cm~2的样品的临界电流密度达到了1.72×10~5A/cm~2,比干净的MgB_2要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.
High performance MgB2 superconducting thin films can be prepared by hybrid physical-chemical vapor deposition (HPCVD), and the films are irradiated with Ti ions. The irradiated samples are doped Compared with the untreated clean MgB2 sample, the superconducting transition temperature did not decrease sharply, while the critical current density in the applied magnetic field was obviously increased, and the upper critical magnetic field of the sample was also obtained At a temperature of 5 K and a vertical magnetic field of 4 T, the critical current density of the sample irradiated with Ti ion at dose of 1 × 10 ~ (13) / cm 2 reached 1.72 × 10 ~ 5A / cm ~ 2, which is much higher than that of clean MgB_2, while its superconducting transition temperature can still be maintained at a high level of 39.9 K.