论文部分内容阅读
利用变温FTIR测量和变温Hall效应测量方法,探讨了在室温(RT)至475℃温度范围内,硅中9μm峰的中心位置及其红外吸收系数随温度变化的规律.实验证实了氧在硅单晶中存在二种不同的组态:在RT—325℃范围内为Si_2O组态,其束缚能为E_b～0.8—1.0eV;在325—475℃范围内,Si_2O组态和准自由间隙氧原子组态同时并存,准自由氧原子扩散所须克服硅晶格的势垒为E_L～1.5—1.6eV.由此很好地解释了硅中氧的热扩散行为.
The change of the center position of 9μm peak and its infrared absorption coefficient with temperature in the temperature range from room temperature (RT) to 475 ℃ was discussed by means of variable temperature FTIR measurement and variable temperature Hall effect measurement. There are two different configurations in the crystal: the Si_2O configuration at RT-325 ° C has an E_b ~ 0.8-1.0eV binding energy; in the range of 325-475 ° C, the Si_2O configuration and the quasi-free interstitial oxygen atom Configuration coexist, the quasi-free oxygen atoms to overcome the silicon lattice barrier must be E_L ~ 1.5-1.6eV. This is a good explanation for the thermal diffusion of silicon oxygen.