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本文介绍用离子束增强沉积（ＩＢＥＤ）法在硅片上制备氮化硼（ＢＮ）薄膜及镀膜参数对膜中立方氮化硼（ｃ－ＢＮ）含量的影响的试验研究，主要研究轰击离子束密、镀膜速率、轰击束中氩气的含量及衬底温度的影响。用红外（ＩＲ）谱对膜进行了分析，结果指出：（１）在给定的轰击束能量与束密下氮化硼薄膜中立方相的含量是随镀膜速率而变化的，且存在一个最佳镀膜速率值；（２）提高离子轰击束密，则此最佳镀膜速率值也相应增大；（３）镀膜速率又是随轰击束密及轰击束中氩气含量的增大而减小的；（４）衬底温度在４００℃以下时，膜中ｃ－ＢＮ相的含量随温度提高而增加。
In this paper, we introduce the experimental research on the effect of coating boron nitride (BN) thin film on the silicon wafer by ion beam enhanced deposition (IBED) method and the influence of coating parameters on the content of cubic boron nitride (c-BN) in the film. Density, coating rate, the content of argon in the bombardment beam and the substrate temperature. The analysis of the film by infrared (IR) spectroscopy showed that: (1) The amount of cubic phase in the boron nitride film varies with the coating rate for a given bombardment beam energy and beam confinement, and there is a (2) increasing the ion bombardment beam density, the optimal coating rate also increased accordingly; (3) the coating rate was decreased with the increase of the bombardment bombardment and the argon content in the bombardment beam ; (4) When the substrate temperature is below 400 ℃, the content of c-BN in the film increases with increasing temperature.