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本文详细地研究了HClO_4对Li和Ge的干扰.HClO_4对Li原子吸收信号有明显的抑制作用,干扰的主要原因是气相中形成LiCl。当预加热温度达2000℃时,残留HClO_4干扰可消除。在HClO_4分解之前加入NH_4NO_3,可消除其干扰。HClO_4对Ge有增感作用,并与灰化温度有密切关系。500℃以前HClO_4增感效应随温度升高变化较小,高于500℃增感效应明显增加。
In this paper, the interference of HClO_4 on Li and Ge has been studied in detail.The HClO_4 has obvious inhibitory effect on Li atomic absorption signal, the main reason of interference is the formation of LiCl in the gas phase. When the pre-heating temperature reaches 2000 ℃, the residual HClO_4 interference can be eliminated. Before the decomposition of HClO_4 NH_4NO_3, to eliminate its interference. HClO_4 has a sensitizing effect on Ge, and is closely related to ashing temperature. Before 500 ℃, the sensitization effect of HClO_4 changed little with the increase of temperature. The sensitization effect of HClO_4 above 500 ℃ increased obviously.