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研究了注F加固PMOSFET的总剂量辐照响应特性和辐照后由氧化物电荷、界面态变化引起的阈电压漂移与时间、温度、偏置等退火条件的关系，发现一定退火条件下注F加固PMOSFET由于界面态密度、特别是氧化物电荷密度继续增加，使得电路在电高辐照后继续损伤，探讨了加速MOS器件电离辐照感生界面态生长的方法。
The relationship between the total dose radiation response of the PMOSFET implanted with F and the threshold voltage drift caused by the change of the charge and the interface state after irradiation with annealing time, temperature and bias was studied. Due to the increase of the interface state density, especially the oxide charge density, the strengthened PMOSFETs continue to be damaged after the high-power irradiation, and the method of accelerating the interfacial growth induced by ionizing radiation is discussed.