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为了提高GaSb基半导体激光器的功率效率和可靠性,研究了GaSb基半导体激光器欧姆接触形成机理并提出了一种新型四层金属欧姆接触结构(Ni/AuGe/Mo/Au)。进行了Au/Mo/AuGe/Ni/n-GaSb在150℃～450℃退火温度下欧姆接触的实验研究,结果表明,新结构能够在250℃～450℃退火温度和10min退火时间下形成良好的欧姆接触并具有较低的接触电阻率,有效地提高了GaSb基半导体激光器的功率效率。俄歇射线能谱分析表明,新型金属化结构中各原子之间的互扩散减少,结构表面形貌光滑、平整,有助于半导体激光器后续封装的进行,有效地提高了GaSb基半导体激光器的可靠性。
In order to improve the power efficiency and reliability of GaSb-based semiconductor lasers, the formation mechanism of ohmic contact of GaSb-based semiconductor lasers and a novel four-layer metal-ohmic contact structure (Ni / AuGe / Mo / Au) are proposed. The experimental study on the ohmic contact of Au / Mo / AuGe / Ni / n-GaSb at the annealing temperature of 150 ℃ ~ 450 ℃ shows that the new structure can form a good ohmic contact at the annealing temperature of 250 ℃ ~ 450 ℃ and the annealing time of 10min Ohmic contact with lower contact resistivity, effectively improving the power efficiency of the GaSb-based semiconductor laser. Auger ray spectroscopy analysis shows that the mutual diffusion between the atoms in the new metallization structure is reduced, the surface morphology of the structure is smooth and flat, which is conducive to the subsequent packaging of the semiconductor laser and effectively improves the reliability of the GaSb-based semiconductor laser Sex.