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文中报导了用分子束外廷工艺在ＧａＡｓ（２１１）Ｂ衬底上生长了较高质量的中、长波ＨｇＣｄＴｅ薄膜材料。生长后的材料通过退火进行转型和调节电性参数。选择的组分分别为ｘ＝０．３３０和０．２２６的两种材料，７７Ｋ时载流子浓度和迁移率分别为ｐ＝６．７×１０１５ｃｍ－３、ｕｐ＝２６０ｃｍ２Ｖ－１ｓ－１和４．４５×１０１５ｃｍ－３、４１０ｃｍ２Ｖ－１ｓ－１。研制了平面型中、长波线列光伏探测器，其典型的探测器Ｄ分别为５．０×１０１０ｃｍＨｚ１／２Ｗ－１和２．６８×１０１０ｃｍＨｚ１／２Ｗ－１（１８０°视场下），其中６４元线列中波探测器与ＣＭＯＳ电路芯片在杜瓦瓶中耦含后读出并实现了红外成像演示。
The paper reports the growth of high quality HgCdTe thin films on GaAs (211) B substrate by molecular beam epitaxy. The grown material is transformed by annealing and the electrical parameters are adjusted. The selected components were x = 0.330 and 0.226, respectively. The carrier concentration and mobility at 77K were p = 6.7 × 1015cm-3 and up = 260cm2V-1s-1 and 4 .45 × 1015 cm-3,410 cm 2 V-1 s-1. The planar mid-long wave array photovoltaic detector was developed. The typical detector D is 5.0 × 1010cmHz1 / 2W-1 and 2.68 × 1010cmHz1 / 2W-1 (180 ° field of view) The element line wave detector and the CMOS circuit chip are coupled in the Dewar bottle and read out and realize the infrared imaging demonstration.