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对QCr0.8/TC4进行电子束焊接,研究焊缝中金属间化合物层(即IMC-layer)对接头力学性能的不利影响,提出利用电子束二次叠加焊接方式来改善接头性能的思路。结果表明,对中焊时在铜侧熔合线处形成的金属间化合物层,偏铜侧焊接时在钛侧熔合线处形成的金属间化合物层,是接头中的薄弱环节。利用电子束叠加焊接方式,须合理设计焊接顺序。先进行对中焊,再利用偏铜侧焊接,可将第一道焊缝形成的金属间化合物层破碎重熔,形成组织较好的化合物层,改善接头的力学性能。接头的抗拉强度为276.0MPa,达到了母材强度的76.7%。
Electron beam welding of QCr0.8 / TC4 was carried out to study the adverse effect of the intermetallic compound layer (ie IMC-layer) on the mechanical properties of the joint. The idea of improving the joint performance by using electron beam double superposition welding was proposed. The results show that the intermetallic compound layer formed on the fusion side of the titanium side during welding is the weakest link in the intermetallic compound layer formed on the copper side fusion line during welding. The use of electron beam superimposed welding method, to be a reasonable design of the welding sequence. First on the welding, and then use the partial copper side welding, the first seam of the intermetallic compound layer formed by remelting broken to form a better compound layer compound to improve the mechanical properties of joints. Tensile strength of the joint was 276.0 MPa, reaching 76.7% of the base metal strength.