研究了背照式InGaN p-i-n结构的紫外探测器的制备与数值模拟。通过低压金属有机化学气相沉积(MOCVD)方法生长p-GaN/i-InGaN/n-GaN外延片,采用标准的Ⅲ-Ⅴ族器件制备工艺,成功制备出p-i-n结构的InGaN紫外探测器。探测器台面半径为30μm,在-5V偏压下暗电流为-6.47×10~(-12) A,对应的电流密度为2.29×10~(-7) A/cm~2。该探测器响应波段为360~380nm,在371nm处达到峰值响应率为0.21A/W,对应的外量子效率为70%,内量子效率为78.4%。零偏压下,优值因子R0A=5.66×10~7Ω·cm~2,对应的探测率D*=2.34×10~(13) cm·Hz~(1/2)·W~(-1)。同时,利用Silvaco TCAD软件进行数值模拟,响应率曲线仿真值与实验值拟合较好。 The preparation and numerical simulation of back-illuminated InGaN p-i-n UV detectors were studied. The p-i-n InGaN UV detector has been successfully prepared by the standard III-V device fabrication process by growing a p-GaN / i-InGaN / n-GaN epitaxial wafer by low pressure metalorganic chemical vapor deposition (MOCVD). The detector surface radius is 30μm, the dark current is -6.47 × 10 ~ (-12) A at a bias voltage of -5V, and the corresponding current density is 2.29 × 10 -7 A / cm ~ 2. The detector has a response band of 360-380 nm, a peak response rate of 0.21 A / W at 371 nm, a corresponding external quantum efficiency of 70% and an internal quantum efficiency of 78.4%. Under zero bias, the optimal value of R0A = 5.66 × 10 ~ 7Ω · cm ~ 2 and the corresponding detection rate D * = 2.34 × 10 ~ (13) cm · Hz ~ (1/2) · W ~ . At the same time, using Silvaco TCAD software to simulate, response curve simulation value and experimental value fit better.