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用生长一防回熔层的LPE方法制作了波长为1.6μm的GaInAsP/InP隐埋异质结(以下简称BH)激光器。为了防止腐蚀过的晶片在第二次生长时的热损伤并有助于平坦生长,采用了一种新的制作工艺。对于腔长约为300μm、条宽为3～5μm的激光器,获得了23mA的低阈值电流。直到大于2倍多阈值时仍能单横模工作。也可在阈值电流为28mA下实现室温CW工作,其微分量子效率约为30％。测量了阈值电流和微分量子效率与温度的关系,并根据由能带劈裂造成的价带内的吸收损耗进行了解释。
A GaInAsP / InP buried heterojunction (hereinafter referred to as BH) laser with a wavelength of 1.6μm was fabricated by LPE method of growing a anti-reflow layer. In order to prevent the thermal damage of the etched wafer during the second growth and to contribute to the flat growth, a new manufacturing process is adopted. For a laser with a cavity length of about 300 μm and a stripe width of 3 to 5 μm, a low threshold current of 23 mA was obtained. Until more than 2 times more than the threshold when the single transverse mode can still work. It is also possible to achieve CW operation at a threshold current of 28 mA with a differential quantum efficiency of about 30%. The relationship between threshold current and differential quantum efficiency and temperature was measured and explained based on the absorption loss in the valence band caused by band splitting.