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以 Sb2 O3单施主和 Y2 O3+ Nb2 O5 双施主作为半导化元素 ,对低阻 Ba Ti O3半导体陶瓷的 PTCR特性进行了研究 ,通过不同的掺杂方式及工艺得到了低电阻率 PTC陶瓷材料 ,室温电阻率ρ2 5 =4· 49Ω· cm ,温度系数 αT=6 .0 4× 10 - 2 °C- 1 ,升阻比 β=1.0× 10 3,对低阻 PTC材料进行了探讨。
The PTCR characteristics of low resistance BaTiO3 semiconductor ceramics were investigated by using single donor of Sb2O3 and double donors of Y2O3 + Nb2O5 as semiconducting elements. The PTC ceramics with low resistivity were obtained by different doping methods and processes, The resistivity at room temperature ρ2 5 = 4.49 Ω · cm, the temperature coefficient αT = 6.04 × 10 -2 ° C -1, and the resistance to drag ratio β = 1.0 × 10 3, the low resistance PTC materials were discussed.