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本专利介绍一种用于制作短波灵敏辐射探测器的方法,其具体制作步骤如下: 用一个氮化硅介电散射装置(11)复盖衬底(10),该介电散射装置上至少有一层氧化层紧挨着衬底。通过氮化硅层注入离子。然后在较高的温度下进行后扩散处理。
This patent describes a method for making a short-wave sensitive radiation detector, which is specifically made by the steps of: covering a substrate (10) with a silicon nitride dielectric scattering device (11) having at least one The oxide layer is next to the substrate. Ions are implanted through the silicon nitride layer. Post-diffusion treatment is then carried out at a higher temperature.