论文部分内容阅读
目前国内存储器辐照效应研究多数集中于功能测试,对具体参数研究较少。本文提出了浮栅型存储器阈值电压的测试方法,并引入紫外预辐照方法,对几种不同集成度的浮栅型存储器EPROM,开展了脉冲与稳态总剂量效应对器件阈值电压影响的异同性研究,分析了损伤机理。研究结果表明,不同于MOS和CMOS器件,脉冲辐照引起的浮栅ROM器件阈值电压漂移大于稳态辐照,为系统器件选型提供了重要参考。
At present, most of the research on the radiation effects of memory in China focuses on functional testing, and few studies on the specific parameters. This paper presents a method for testing the threshold voltage of floating-gate memory and introduces the UV pre-irradiation method. The effects of pulse and steady-state total dose effects on the device threshold voltages are investigated for several EPROMs with different integration levels Sexual research, analyzed the mechanism of injury. The results show that, unlike MOS and CMOS devices, the threshold voltage drift of floating-gate ROM devices caused by pulse irradiation is larger than that of steady-state radiation, which provides an important reference for the selection of system components.