针对现行Ｐ型杂质扩散工艺的不足，开展了受主双质掺杂新技术的研究．经对比实验和工艺论证，首先研究成功开管铝镓一步扩散法．应用证明，该项技术用于制造高压大电流晶闸管是可行的，产品电参数一致性和综合性能好，合格率高，为电力半导体器件研究和生产开创了一条先进的工艺途径． Aiming at the deficiency of current P-type diffusion process, a new technology of acceptor double doping was developed. After comparative experiments and process demonstration, the first successful open-tube aluminum gallium diffusion method. Application proves that this technology is feasible for manufacturing high voltage high current thyristor. The product has good electrical parameter consistency and comprehensive performance with high pass rate, thus creating an advanced process route for the research and production of power semiconductor devices.