偏置电压对Si-PIN型半导体探测器将产生两方面的影响。偏置电压越高,结电容越小;另一方面,偏置电压越大,探测器的漏电流就越大。而探测器的结电容,漏电流是影响谱仪系统能量分辨率的最重要的因素。结合一些实验结果,从两个方面来讨论偏置电压对于由Si-PIN探测器构成的X射线谱仪能量分辨率的影响,以及探测器偏置电压的合理选取原则。 Bias voltage will have two effects on Si-PIN type semiconductor detector. The higher the bias voltage, the smaller the junction capacitance; the other hand, the greater the bias voltage, the greater the detector leakage current. The detector junction capacitance, leakage current is the most important factor affecting the energy resolution of the spectrometer system. In combination with some experimental results, the influence of bias voltage on the energy resolution of X-ray spectrometer composed of Si-PIN detector and the reasonable selection principle of detector bias voltage are discussed from two aspects.