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美国Technologies and Devices International(TDI)公司在开发SiC功率电子新产品方面迈出了一大步,实验演示了一种1cm~2SiC二极管芯片。他们所制作的这种4H—SiC肖特基二极管的阻塞电压为300V,正向电流高至300A。该二极管芯片是用4H—SiC制
The United States of America Technologies and Devices International (TDI) company in the development of SiC power electronics new product has taken a big step, the experiment demonstrated a 1cm ~ 2SiC diode chip. The 4H-SiC Schottky diode they produced had a blocking voltage of 300V and a forward current of 300A. The diode chip is made of 4H-SiC