用离子注入技术对磷砷化镓进行了掺氮,给出了组分在0.175≤x≤<0.8间氮能级随组分变化的方程式为E_N_x=1.694+0.524x-0.020x~2.利用测得的光致发光谱线算得的(?)为参数对组分x作图,可求得在本实验条件下能够存在氮等电子陷阱的极限组分x≈0.166.对磷砷化镓掺氮及氧的研究结果表明,氮和氧可在磷砷化镓中引进一系列深能级电子陷阱,它们的形成与掺杂次序无关. Nitrogen was doped into gallium arsenide by ion implantation, and the equation for the composition of the gallium arsenide at 0.175≤x≤ <0.8 was E_N_x = 1.694 + 0.524x-0.020x ~ 2. The calculated photoluminescence spectrum (?) Is obtained by plotting the parameter x on the component x, and the limit component of the electron traps such as nitrogen x≈0.166 can be obtained under the experimental conditions. The results of nitrogen and oxygen studies show that nitrogen and oxygen can introduce a series of deep-level electron traps in GaAs, their formation has nothing to do with the order of doping.