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本实验采用脉冲准分子激光沉积（ＰＬＤ）法，在１９３ｎｍ波长，５Ｈｚ频率，４Ｊ／ｃｍ２能量密度条件下，分别在Ｓｉ（１００）和ＳｉＯ２／Ｓｉ衬底上成功地沉积Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３（ＰＺＴ）薄膜，并在不同的条件下对ＰＺＴ薄膜进行退火处理。用ＸＲＤ，ＲＢＳ，ＡＳＲ等方法分别测量了薄膜的结构、组份和厚度。
In this experiment, Pb (Zr, Ti) was successfully deposited on Si (100) and SiO2 / Si substrates by using pulsed excimer laser deposition (PLD) at 193 nm, 5 Hz and 4 J / O3 (PZT) thin films were prepared and the PZT films were annealed under different conditions. The structure, composition and thickness of the films were measured by XRD, RBS and ASR respectively.