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离子注入机ⅦSta平台对≤130nm尺寸CMOS工艺在整个能量和剂理范围提供单片注入。这些注入机的特征是硬件和设计原理通用,并包含离子束注入角控制、剂量测定和终端站设计。这种方法对重叠剂量范围能使工艺可完全互换,并对引起制造所有权成本(COO)降低提供了最大的灵活性。一个完整工艺的透彻性需要剂量形貌特征精确匹配,并很好地说明这一能力、晕圈效应、VT和延展注入。此外,也证实了ⅦSta平台的单片设计消除了缺陷来源,确保了无风险工艺互换。
Ion Implanter Ⅶ Staging Platform For ≤130 nm size CMOS processes, monolithic implantation is provided over the entire energy and dose range. These implanters feature common hardware and design principles and include ion beam injection angle control, dosimetry and end station design. This approach provides complete interchangeability of processes for overlapping dose ranges and provides maximum flexibility for reducing manufacturing cost of ownership (COO). The thoroughness of a complete process requires exact matching of the morphological features of the dose and is a good illustration of this ability, the halo effect, the VT, and the extension implant. In addition, it was also confirmed that the single-chip design of the VIISta platform eliminated the source of defects and ensured a risk-free process interchange.