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Multilayer gallium and aluminum doped ZnO (GZO/AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide(GZO) and Al-doped zinc oxide(AZO) thin film by using pulsed laser deposition(PLD) process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO (1:1) thin film deposited at 400 °C shows the electrical resistivity of 4.18×10-4 Ω·cm, an electron concentration of 7.5×1020 /cm3, and carrier mobility of 25.4 cm2/(V·s). The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the Al ratio.
Multilayer gallium and aluminum doped ZnO (GZO / AZO) films were fabricated by alternative deposition of Ga-doped zinc oxide (GZO) and Al-doped zinc oxide (AZO) thin film by using pulsed laser deposition optical properties of these GZO / AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO / AZO (1: 1) thin film deposited at 400 ° C shows the electrical resistivity of 4.18 × 10 -4 Ω · cm 2, an electron concentration of 7.5 × 10 20 / cm 3, and a carrier mobility of 25.4 cm 2 / (V · s). The optical transmittances of GZO / AZO thin films are over 85%. The optical band gap energy of GZO / AZO thin films linearly decreases with increasing the Al ratio.