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用于凝视和扫描上的第二代红外成象系统要求有高密度的焦平面列阵,为了满足这些要求,已经研制了用HgCdTe光电二极管作为探测器和用硅CCD作为信号处理的焦平面结构。虽然常规的离子注入混合列阵己经成功地被用于CCD多路调制器,但在LPE层上制作混合列阵,出现了一些与性能、工艺过程和产量有关的优点。己经测出,用大量富汞熔体进行LPE制备的异质结二极管的性能比常规的离子注入器件要好。这些器件是由p型衬底生长n型LPE层构成的。这些外延层在原生时都是n型,且不需经过退火。由这些外延层制作的器件其R_oA_j乘积大,且组分均匀性好。这里将介绍用于8—121μm和3—5μm的器件数据。
Second-generation infrared imaging systems for gaze and scanning require high-density focal plane arrays. In order to meet these requirements, a focal plane structure using HgCdTe photodiodes as detectors and a silicon CCD signal processing has been developed . Although conventional ion implantation hybrid arrays have been successfully used in CCD multiplexers, hybrid arrays are fabricated on the LPE layer with some performance, process and yield related advantages. It has been determined that heterojunction diodes made with LPF-rich melts have better performance than conventional ion-implanted devices. These devices are made of p-type substrate grown n-type LPE layer. These epitaxial layers are n-type natively and do not require annealing. Devices fabricated from these epitaxial layers have large R_oA_j products and good compositional uniformity. Here are the device data for 8-121μm and 3-5μm.