InTiZnO thin-film transistors (ITZO TFTs) with Al2O3 gate dielectrics are fabricated by magnetron sputtering at room temperature.The bottom-gate-type ITZO TFTs with amorphous Al2O3 gate dielectrics are operated in the enhancement mode and exhibit a mobility of 50.4 cm2/V.s,threshold voltage of 1.2 V,subthreshold swing of 94.5 mV/decade,and on/off-current ratio of 7 × 106.We believe that ITZO deposited at room temperature is an appropriate semiconductor material to produce high-mobility TFTs for developing flexible electronic devices.