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本文讨论了SOI栅控混合管（GCHT）的设计及制备．对这种器件的物理机制进行了实验验证，得到结论：GCHT漏端电流在栅压较高时趋向于双极电流，而不如文献[4]中报道是MOS电流．实验结果表明，这种混合管具有比纯MOSFET约高6．5倍，比纳BJT约高1．7倍的驱动能力，最高电流增益可达10000，最小亚阈摆幅可达66mV／dec，导通电压比纯BJT约低0．3V，比纯MOSFET约低0．7V由GCHT组成的反相器在Vdd=0.8V仍具有良好的直流传输特性．因此GCHT在低压低功耗应用领域中极具潜力，同时也将适于模拟电路方面的应用．
This article discusses the design and fabrication of a SOI Gated Gate Mixer (GCHT). The physical mechanism of this device is experimentally verified. It is concluded that the GCHT drain current tends to be bipolar at higher gate voltages, rather than the MOS current reported in [4]. The experimental results show that this hybrid tube has about 6.5 times higher power than pure MOSFET and about 1.7 times higher than the BJT. The highest current gain can reach 10000 and the minimum subthreshold swing can reach 66mV / dec. The turn-on voltage is about 0.3V lower than pure BJT and about 0.7V lower than that of pure MOSFET. The inverter consisting of GCHT has good DC transmission characteristics at Vdd = 0.8V. Therefore, GCHT has great potential in low-voltage and low-power applications and will also be suitable for analog circuit applications.