A Ga2O·11Al2O3 nanonet pre

来源 :中国科学：化学英文版 | 被引量 : 0次 | 上传用户：lengyubo88

【摘要】

：

A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 7

【出处】

：

中国科学：化学英文版

【发表日期】

：

2010年2期

【关键词】

：

AAO TEMPLATE Ga2O vapor Ga2O·11Al2O3 nanonet GaN NANOWIRE interfacial react

【基金项目】

：

supported by the National Natural Science Foundation of China (Grant Nos. 50821061, 20773001, 20827002),Ministry of Sceince and Technology of China (2006CB806102, 2007CB936202, 2009CB929403)

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A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide (AAO)

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A Ga<sub>2</sub>O·11Al<sub>2</sub>O<sub>3</sub> nanonet pre

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