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利用正电子湮没寿命谱 (PAT)和X射线电子能谱 (XPS)研究了掺镧所引起的PbWO4 晶体缺陷的变化 .结果表明 :掺镧后 ,PbWO4 晶体中的正电子捕获中心铅空位 (VPb)浓度增加 ,并进一步诱导低价氧浓度的增加 .讨论了掺La的作用机制 ,认为掺La将抑制晶体中的氧空位 ,增加铅空位浓度 .
The changes of PbWO4 crystal defects induced by lanthanum were studied by means of positron annihilation lifetime (PAT) and X-ray photoelectron spectroscopy (XPS). The results show that the Pb (superscript +) vacancy ), And further induce the increase of low oxygen concentration.The mechanism of La-doping is discussed, and it is considered that La-doping suppresses oxygen vacancies in crystal and increases lead vacancy concentration.