牵引用3300 V IGBT/FRD芯片组设计与开发

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针对轨道交通绝缘栅双极晶体管(IGBT)的应用特点,利用计算机仿真技术对终端结构进行优化,提高耐压特性;采用台面栅结构,提高开关速度;通过控制载流子注入效率,改善Vceon与Eoff的折中关系,降低芯片损耗;采用先进元胞设计技术,提高芯片短路能力,从而提高芯片可靠性;通过超低阳极掺杂控制阳极注入效率,免除局部寿命控制,降低FRD的反向漏电流。研究开发了3300V IGBT及其配套FRD芯片,满足轨道交通的应用要求。 Aiming at the application characteristics of rail insulated gate bipolar transistor (IGBT), the terminal structure is optimized by computer simulation technology to improve the withstand voltage characteristics. The mesa grid structure is adopted to improve the switching speed. By controlling the carrier injection efficiency, Vceon and Eoff compromise, reduce chip loss; advanced cell design technology to improve chip short circuit capability, thereby enhancing the reliability of the chip; anode anode low anode doping control anode injection efficiency, eliminating local life control and reduce the FRD reverse leakage Current. Research and development of 3300V IGBT and its supporting FRD chip to meet the application requirements of rail transit.
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