片状氮化硼作为硼扩散杂质源,我们用来试生产集成电路低功耗TTL与非双门,低功耗D型触发器以及低功耗四位二进制计数器都得到了满意的结果。在其它工艺条件相同情况下,用片状氮化硼作为硼扩散杂质源所生产的双门,双D中测管芯成品率完全可以达到用粉末状氮化硼源的成品率。在试制中规模集成电路低功耗四位二进制计数器,按二位以上性能好的管芯统计,中测成品率可达15％～20％,其中四位全好的管芯占有 Flake boron nitride as a source of boron diffusion impurities, we used to pilot production of integrated circuits low-power TTL and non-dual-door, low-power D-type flip-flop and low-power four binary counters have been satisfied with the results. In other conditions under the same conditions, the use of flake boron nitride as a diffusion source of boron produced by the two-door, double D in the test die yield can be achieved with the powder boron nitride source yield. In trial production of low-power integrated circuits, four binary counter, according to more than two performance of the core statistics, the measured yield of up to 15% to 20%, of which four good die possession