本文综述制作三维硅半导体器件的各向异性腐蚀技术。描述(100)和(110)硅面上的V形槽和U形槽结构。评价了业已报导的几种各向异性腐蚀液。并对实现各向异性腐蚀的物理因素进行了分析。最后指出了尚待解决的若干问题。 This article reviews three-dimensional silicon semiconductor device anisotropic etching technology. V-groove and U-groove structures on (100) and (110) silicon surfaces are described. Several anisotropic etchants have been evaluated. The physical factors of realizing anisotropic corrosion are also analyzed. Finally pointed out some problems that still need to be solved.