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在EPROM器件中,栅注入电流Ig对于Si表面的可动电子浓度n和电场E非常敏感。我们用二维电子温度器件模拟程序研究了n、E和Ig与掺杂分布的关系。 我们研究了沟长L=2(μm)、浮置栅氧化层厚度T_(ox)=400(?)的双栅EPROM器件。漏极写入电压采用17V,产生的漏电流为1.2mA。我们在一个等效的MOSFET上调节栅电压,以便使漏电流I_d与这一写电流相等,发现三种不同的沟道分布的浮置栅压(V_(gf))当量为12.8V、13.9V和16V。
In the EPROM device, the gate injection current Ig is very sensitive to the movable electron concentration n and the electric field E of the Si surface. We used two-dimensional electronic temperature simulation program to study the relationship between n, E and Ig and doping distribution. We have studied a double-gate EPROM device with a trench length of L = 2 (μm) and a floating gate oxide thickness of T_ (ox) = 400 (μ). Drain write voltage using 17V, the resulting leakage current of 1.2mA. We adjust the gate voltage on an equivalent MOSFET so that the drain current I_d equals this write current and we find that the floating gate voltage (V_ (gf)) equivalent of the three different channel distributions is 12.8V and 13.9V And 16V.