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本文运用半导体能带理论探讨了硅衬底上铁电薄膜的异质结效应的物理模型．对用sol－gel工艺制备的PZT／Si结构的极化特性、开关特性和I－V特性的实验研究证实了这种效应．
In this paper, the physical model of the heterojunction of ferroelectric thin films on silicon substrate is discussed by using the theory of semiconductor band. The experimental investigation of the polarization, switching and I-V characteristics of a PZT / Si structure prepared by a sol-gel process confirms this effect.