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已研究成功一种新型单片集成功率开关器件(MOS栅晶体管MGT),其结构是:双极晶体管作输出级,两个MOS FET作驱动级。研究的目的是为了获得一种具有如下特性的功能开关器件:容易驱动,关断时间短和电流密度大。研究的器件结构特点是,在一个小单元内集成三个元件,MGT芯片由很多这种小单元组合而成。这种器件没有寄生闸流管,使它避免了闭锁现象。已研制成功具有阻塞电压为400～500伏的单元MGT器件。它能达到:在2伏集电极-发射极电压下,电流密度高达90安/平方厘米,关断时间短至1μs。一个MGT器件芯片包含36个小单元,制作在5×5mm的芯片上。在150℃时,其阻塞电压为500伏,在10A的电流下,开态电压为2.3伏,关断时间为0.5μs。
Has successfully studied a new type of monolithic integrated power switching device (MOS gate transistor MGT), the structure is: bipolar transistor for the output stage, two MOS FET driver stage. The purpose of this study was to obtain a functional switching device that has the following characteristics: easy drive, short turn-off time and high current density. The structure of the device under study is characterized by the integration of three elements in a small cell, the MGT chip being composed of many such small cells. This device has no parasitic thyratron, which prevents it from blocking. Has been successfully developed with a blocking voltage of 400 ~ 500 volts unit MGT devices. It achieves a current density of up to 90 Amps / cm2 at a collector-emitter voltage of 2 V with a turn-off time as short as 1 μs. An MGT device chip contains 36 cells, made on a 5 x 5mm chip. At 150 ° C, the blocking voltage is 500 volts. At a current of 10A, the on-state voltage is 2.3 volts and the turn-off time is 0.5 μs.