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报道了(100)半绝缘GaAs衬底和(100)掺Te GaSb衬底上分子束外延法生长的Ga_(1-x)In_xAs_(1-y)Sb_y材料的傅里叶变换红外光谱特性,分析解释了引起两种衬底上Ga_(1-x)In_xAs_(1-y)Sb_y外延材料红外光谱差异的原因.实验确定了这种材料的带隙和相应波长,与内插法计算的结果进行了比较,发现所有样品的实验值均偏大于理论值,对此进行了理论探讨.
The Fourier transform infrared spectra of (100) semi-insulating GaAs substrates and (100) Te GaSb substrates grown by molecular beam epitaxy have been reported. The Fourier transform infrared spectra of Ga 1-x In x As 1- The reason for the difference in the infrared spectra of the Ga 1-x In x As 1-y Sb_y epitaxial materials on the two substrates is explained, and the bandgap and the corresponding wavelength of this material are experimentally determined, In comparison, the experimental values of all samples were found to be larger than the theoretical ones, and the theoretical study was carried out.