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通过对器件结构进行优化设计和择优腐蚀技术 ,用 H3 PO4 - H2 O2 - H2 O系腐蚀液制作了能直接与单模光纤阵列相耦合的 MMI型 Ga As1× 4光功率分配器 .最后用 1 .3 μm波长的He- Ne激光进行了测试 ,发现该器件基本实现了功率均分要求 ,功率离散度为 0 .1 55d B.
The MMI Ga As1 × 4 optical power splitter which can be directly coupled with the single mode fiber array was fabricated by H3 PO4 - H2 O2 - H2 O system etching solution through the optimized design of the device structure and the optimum etching technology.Finally, .3 μm wavelength He-Ne laser was tested and found that the device achieved the average power requirements, the power dispersion of 0.151d B.