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利用射频磁控溅射方法生长掺钛铌镁酸铅-钛酸铅(lead magnesio-niobate titanate,PMN-PT)薄膜,研究PMN-PT薄膜的热处理技术,并测试制备的PMN-PT薄膜样品的晶向结构及电性能。结果表明:PMN-PT薄膜在450℃退火就能完全晶化成钙钛矿结构,其热释电系数达到0.9×10-8 C/(cm2·K),有望解决目前阻碍集成式铁电型非制冷焦平面探测器技术发展的瓶颈问题,即铁电薄膜晶化生长所需的高温与读出电路可承受温度的兼容性问题。
The lead magnesio-niobate titanate (PMN-PT) film was grown by radio-frequency magnetron sputtering. The heat treatment technology of PMN-PT film was studied. The prepared PMN-PT film sample Crystal structure and electrical properties. The results show that the PMN-PT thin film can be completely crystallized into a perovskite structure by annealing at 450 ℃, and the pyroelectric coefficient reaches 0.9 × 10-8 C / (cm2 · K) The bottleneck of the development of the technology of the cooling focal plane detector is that the high temperature required for the crystallization growth of the ferroelectric thin film and the readout circuit can withstand the compatibility of the temperature.