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美国无线电公司电子部关于这样一种器件已经进行了大量的研究工作,在这种器件中,用电子束激励半导体表面来倍增电流。美国无线电公司把这种器件称为“注入电子束的晶体管放大器”,简写作EBIT。好多的实验已经研制出了能够提供电流增益1,000,同时能够起微波放大器作用的器件。然而,如何把电子束与半导体元件结合到一个单一的真空外壳内,以便用这样的方法制造出在长的寿命期间保持可靠的实际器件,却很少发表。众所周知,例如,当存在污染材料时,氧化物阴极不能生存。同样,半导体对高的烘烤温度和工作温度,以及在可凝结的蒸汽中工作,有着限制。
A considerable amount of research has been conducted by the U.S. radio company Electronics on such a device in which electron beams are used to excite the semiconductor surface to double the current. The U.S. radio company called the device “an electron beam injected transistor amplifier,” short for EBIT. A great deal of experimentation has been developed to provide a current gain of 1,000 and to act as a microwave amplifier. However, how to combine the electron beam and the semiconductor element into a single vacuum envelope to produce an actual device that remains reliable over a long lifetime in such a manner is rarely disclosed. It is well known that, for example, oxide cathodes can not survive when contaminated material is present. Likewise, semiconductors have limitations on high baking temperatures and operating temperatures, as well as working in condensable vapors.