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本文介绍了一个基于薄膜电路工艺设计、加工的X波段下变频器。首先对整体方案进行分析论证,然后运用安捷伦公司的ADS仿真设计软件,对射频及中频滤波器、朗格电桥、低噪声放大器和混频器等电路单元及变频器系统进行了仿真设计。最后经过加工测试验证,该变频器性能指标良好。其工作频率为9.35GHz-9.85GHz,变频增益≥26dB,噪声系数≤2dB,Po1dB压缩点功率≥10dBm,输入、输出驻波≤1.3,镜像抑制比≥50dB;本振输入为0±1dBm。整个电路腔体结构尺寸为70mm×20mm×10mm。
This article describes a thin film circuit based on process design, processing, X-band downconverter. First of all, the whole program is analyzed and demonstrated. Then, the simulation design of the circuit unit and frequency converter system such as RF and IF filter, Lange bridge, low noise amplifier and mixer are carried out by using Agilent’s ADS simulation design software. Finally, after the processing test to verify that the inverter performance is good. Its operating frequency is 9.35GHz-9.85GHz, frequency conversion gain is ≥26dB, noise factor is ≤2dB, Po1dB compression point power is ≥10dBm, input and output standing wave is ≤1.3, image rejection ratio is ≥50dB; LO input is 0 ± 1dBm. The entire circuit cavity structure size of 70mm × 20mm × 10mm.