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利用射频溅射法在Si衬底上制备了SiC薄膜 ,并利用x射线衍射 (XRD)和红外 (IR)吸收谱对薄膜的结构、成分及化学键合状态进行了分析 .XRD结果表明 ,低温制备的SiC薄膜为非晶相 ,而在高温下 (>80 0℃ ) ,薄膜呈现 4H SiC和 3C SiC结晶相 .IR谱显示 ,溅射制备薄膜的吸收特性主要为Si—C键的吸收 .此外 ,还利用原子力显微镜对薄膜的表面形貌进行了研究 ,并研究了样品的场发射特性
SiC films were prepared on Si substrate by RF sputtering and the structure, composition and chemical bonding state of the films were analyzed by X-ray diffraction (XRD) and infrared (IR) absorption spectroscopy.The XRD results showed that the low temperature preparation SiC films were amorphous, and the films exhibited 4H SiC and 3C SiC crystalline phases at high temperature (> 80 ℃) .The IR spectra showed that the absorption properties of the films prepared by sputtering were mainly the absorption of Si-C bonds. , The surface morphology of the film was also studied by atomic force microscopy and the field emission characteristics